What is 25A 800V Button Diode Rectifier Ars258

Name: 25A 800V Button Diode Rectifier Ars258
Uploaded: 2025-04-01T15:38:25+08:00
Description: 25A,800V- AUTOMOTIVE RECTIFIER DIODE-ARS258/AR258 Datasheet Package PACKAGIE EA PER BOX INNER BOX SIZE (m/m) CARTON SIZE (m/m) EA PER CARTON GROSS WEICH(kg) R-1 1000 195*83*22 443*215*250 50,000 1

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Price

Min. Order Reference FOB Price

1000 Pieces US$1.00 / Piece

Sepcifications

Encapsulation Structure Ra
Application Electronic Products
Certification RoHS, ISO
Transport Package T/P
Specification 25A, 400V
Trademark SY
Origin China
Chip Size 163mil
If 25A
Vrrm 600V
Vf 1.1
Brand Sy

Product Description

25A,800V- AUTOMOTIVE RECTIFIER DIODE-ARS258/AR258 Datasheet Package PACKAGIE EA PER BOX INNER BOX SIZE (m/m) CARTON SIZE (m/m) EA PER CARTON GROSS WEICH(kg) R-1 1000 195*83*22 443*215*250 50,000 12.00 A-405 1000 195*83*22 443*215*250 50,000 12.80 DO-41 1000 195*83*22 ...

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Changzhou Shunye Electronics Co., Ltd.

Gold Member Since 2016

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Business Range Auto, Motorcycle Parts & Accessories, Computer Products, Consumer Electronics, Electrical & Electronics, Industrial Equipment & Components, Light Industry & Daily Use, Lights & Lighting, Packaging & Printing
Main Products SMD Diode; DIP Diode
Management System Certification ISO 9001
Main Markets North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Domestic
OEM/ODM Availability Yes

Button Diode Comparison

	25A 800V Button Diode Rectifier Ars258 Contact Now	Quick View IRFPS3810 super-247 100V 170A HEXFET power mosfet Contact Now	Quick View IRG4BC30UD TO-220AB 600V 12A insulated gate bipolar transistor with ultrafast soft recovery diode ultrafast copack IGBT Contact Now	Juxing Kbj1002 200V10A Ifsm175A Vf1.1 Bridge Rectifier Diode with Kbj Case Contact Now	Juxing Kbj1008 800V10A Ifsm175A Vf1.1 Bridge Rectifier Diode with Kbj Case Contact Now

Transaction Info
	25A 800V Button Diode Rectifier Ars258 Contact Now	Quick View IRFPS3810 super-247 100V 170A HEXFET power mosfet Contact Now	Quick View IRG4BC30UD TO-220AB 600V 12A insulated gate bipolar transistor with ultrafast soft recovery diode ultrafast copack IGBT Contact Now	Juxing Kbj1002 200V10A Ifsm175A Vf1.1 Bridge Rectifier Diode with Kbj Case Contact Now	Juxing Kbj1008 800V10A Ifsm175A Vf1.1 Bridge Rectifier Diode with Kbj Case Contact Now
Price	US $ 1/ Piece	US $ 3.047/ Piece	US $ 1.259/ Piece	US $ 0.0567-0.0621/ Piece	US $ 0.0567-0.0621/ Piece
Min Order	1000 Pieces	1000 Pieces	1000 Pieces	500 Pieces	500 Pieces
Payment Terms	L/C, T/T, Western Union, Paypal	T/T	T/T	T/T, D/P, Western Union, Paypal, Money Gram	T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS, ISO	RoHS, CE, ISO	RoHS, CE, ISO	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	ISO 9001	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Oceania, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	-	-
Annual Export Revenue	US$10 Million - US$50 Million	US$5 Million - US$10 Million	US$5 Million - US$10 Million	US$10 Million - US$50 Million	US$10 Million - US$50 Million
Business Model	OEM, ODM, Own Brand(SY)	OEM, ODM	OEM, ODM	-	-
Average Lead Time	Off Season Lead Time: within 15 workdays Peak Season Lead Time: one month	Off Season Lead Time: within 15 workdays Peak Season Lead Time: within 15 workdays	Off Season Lead Time: within 15 workdays Peak Season Lead Time: within 15 workdays	-	-
Product Attributes
Specification	Encapsulation Structure: Ra; Application: Electronic Products; Chip Size: 163mil; If: 25A; Vrrm: 600V; Vf: 1.1; Brand: Sy;	Encapsulation Structure: super-247; Application: SMPS,power supply; Luminous Intensity: Standard; Color: Black; Structure: Planar; Material: Silicon; Features1: Advanced Process Technology; Features2: Ultra Low On-Resistance; Features3: Dynamic dv/dt Rating; Features4: 175°C Operating Temperature; Features5: Fast Switching; Features6: Fully Avalanche Rated; Features7: Lead-Free;	Encapsulation Structure: TO-220AB; Application: Electronic Products; Luminous Intensity: Standard; Color: Black; Structure: Planar; Material: Silicon; Features1: Industry standard TO-220AB package; Features2: Lead-Free; Features3: Optimized for high operatingfrequencies 8-40 kHz; Features4: ultrafast.ultra-soft-recovery anti-parallel diodes; Benefits1: Generation -4 IGBT's offer highest efficienciesava; Benefits2: IGBTs optimized for specific application condition; Benefits3: "drop-in" replacement for equivalentindustry-stand;	Encapsulation Structure: Plastic Sealed Transistor; Application: Electronic Products; Luminous Intensity: Standard; Color: Black; Structure: Planar; Material: Silicon; Vrrm: 200V; Vrms: 140V; Ifsm: 175A; Vf: 1.1A; I(AV): 10A;	Encapsulation Structure: Plastic Sealed Transistor; Application: Electronic Products; Luminous Intensity: Standard; Color: Black; Structure: Planar; Material: Silicon; Vrrm: 800V; Vrms: 560V; Ifsm: 175A; Vf: 1.1A; I(AV): 10A;
Supplier Name	Changzhou Shunye Electronics Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Guangdong Juxing Electronics Technology Co., Ltd	Guangdong Juxing Electronics Technology Co., Ltd
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