30V/35A Dual N-Channel Advanced Power Mosfet Vs3622de

Features Dual N-Channel, 5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant
Symbol Parameter Condition Min. Typ. Max. UnitStatic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 -- -- VDSS I Zero Gate Voltage Drain Current(Tc=25ºC) VDS=30V,VGS=0V -- -- 1 μAZero Gate Voltage Drain Current(Tc=125ºC) VDS=30V,VGS=0V -- -- 100 μAGSS I Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nAVGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.3 1.9 2.4 VRDS(ON) Drain-Source On-State Resistance VGS=10V, ID=20A -- 10 13 mΩRDS(ON) Drain-Source On-State Resistance VGS=4.5V, ID=10A -- 14 18 mΩDynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance VDS=15V,VGS=0V, f=1MHz 800 880 950 pFCoss Output Capacitance 120 140 160 pFCrss Reverse Transfer Capacitance 90 110 130 pFRg Gate Resistance f=1MHz -- 3.5 -- ΩQg Total Gate Charge VDS=15V,ID=20A, VGS=10V -- 19 -- nCQgs Gate-Source Charge -- 4.3 -- nCQgd Gate-Drain Charge -- 6.5 -- nCSwitching Characteristics d(on) t Turn-on Delay Time VDD=15V, ID=20A, RG=3Ω, VGS=10V -- 6-- nsr t Turn-on Rise Time -- 5-- nsd(off) t Turn-Off Delay Time -- 25-- nsf t Turn-Off Fall Time -- 7-- nsSource- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated) VSD Forward on voltage ISD=20A,VGS=0V -- 0.9 1.2 Vrr t Reverse Recovery Time Tj=25ºC,Isd=20A, VGS=0V di/dt=500A/μs -- 7 -- nsQrr Reverse Recovery Charge 6.3 nC